| Type |
NPN |
| Configuration |
Single |
| Maximum Collector-Emitter Voltage (V) |
400 |
| Maximum Collector-Base Voltage (V) |
700 |
| Maximum DC Collector Current (A) |
8 |
| Material |
Si |
| Maximum Power Dissipation (mW) |
80000 |
| Maximum Storage Time (ns) |
2500 |
| Maximum Fall Time (ns) |
500 |
| Operating Junction Temperature (°C) |
150 |
| Maximum Collector Cut-Off Current (nA) |
200000 |
| Maximum Collector-Emitter Saturation Voltage (V) |
1@0.8A@4A |
| Maximum Base-Emitter Saturation Voltage (V) |
1.5@0.8A@4A |
| Category |
Bipolar Power |
| Minimum DC Current Gain |
10@1mA@5V|13@500mA@5V |
| Number of Elements per Chip |
1 |
| Maximum Turn-On Time (ns) |
1000 |
| Minimum Storage Temperature (°C) |
-65 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-65 |
| Maximum Operating Temperature (°C) |
150 |
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